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ST0962 Gallium Phosphide Sputtering Target, GaP

Chemical Formula GaP
Catalog No. ST0962
CAS Number 12063-98-8
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

Gallium Phosphide Sputtering Target offered by Stanford Advanced Materials (SAM) guarantees exceptional quality and performance, making it a superior choice for precise thin film deposition. GaP Target ensures a reliable and uniform coating, catering to advanced applications. Immerse yourself in the cutting-edge technology of thin films with Gallium Phosphide Sputtering Target, symbolizing professional excellence within the realm of sputtering targets.


Gallium Phosphide Sputtering Target Description

Gallium Phosphide Sputtering Target is a specialized material used in the sputtering process for thin film deposition. In sputtering, high-energy ions are directed at a target material, causing atoms to be ejected from the target surface. These ejected atoms then deposit onto a substrate, forming a thin film with specific properties.

Gallium Phosphide has a cubic crystal structure in which gallium and phosphorus atoms form a lattice in a regular arrangement. It exhibits good optical properties, with a band gap of about 2.26 electron volts (eV), making it suitable for optoelectronics and optical device preparation. As a semiconductor, Gallium Phosphide has electrically tunable conductivity, making it suitable for electronics and optoelectronics applications. It is not a magnetic material, but under specific doping conditions, magnetic impurities can be introduced, which can be used in the study of magnetic materials. Gallium Phosphide is a semiconductor at room temperature, and its conductivity is between that of a conductor and an insulator, depending on the type and concentration of impurities. It exhibits good thermal stability over various temperatures and is suitable for many applications in high-temperature environments.

Related Product: Gallium (III) Selenide Sputtering Target, CIGS Copper Indium Gallium Phosphide Sputtering Target

Gallium Phosphide Sputtering Target Specifications

Compound Formula GaP
Molecular Weight 100.70
Appearance Yellow Target
Melting Point
Density 4.14 g/cm3
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Gallium Phosphide Sputtering Target Handling Notes

  1. Indium bonding is recommended for the Gallium Phosphide Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Gallium Phosphide Sputtering Target Application

  1. Optoelectronics: Gallium Phosphide is used in the preparation of optoelectronic devices such as photodiodes (LEDs) and lasers, and its excellent optical properties provide a reliable basis for these devices.
  2. Semiconductor Devices: As a semiconductor material, Gallium Phosphide is used in the preparation of semiconductor devices, including field effect transistors (FETs) and photodetectors.
  3. Optical Coatings: Due to its excellent optical properties, Gallium Phosphide is used in the preparation of optical films, such as reflector sheets, for lasers and optical sensors.
  4. Magnetic Materials Research: Under specific doping conditions, Gallium Phosphide is used in magnetic materials research to explore potential uses in applications such as magnetic storage and magnetic sensors.
  5. Electronic Components: Gallium Phosphide’s semiconducting properties make it an important material for electronic component manufacturing, supporting the development of integrated circuits and other electronic devices.

Gallium Phosphide Sputtering Target Packaging

Our Gallium Phosphide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.