|99.9%, 99.95%, 99.99%, 99.995%, 99.999%
|Discs, Plates, Column Targets, Step Targets, Custom-made
Gallium Phosphide Sputtering Target offered by Stanford Advanced Materials (SAM) guarantees exceptional quality and performance, making it a superior choice for precise thin film deposition. GaP Target ensures a reliable and uniform coating, catering to advanced applications. Immerse yourself in the cutting-edge technology of thin films with Gallium Phosphide Sputtering Target, symbolizing professional excellence within the realm of sputtering targets.
Gallium Phosphide Sputtering Target is a specialized material used in the sputtering process for thin film deposition. In sputtering, high-energy ions are directed at a target material, causing atoms to be ejected from the target surface. These ejected atoms then deposit onto a substrate, forming a thin film with specific properties.
Gallium Phosphide has a cubic crystal structure in which gallium and phosphorus atoms form a lattice in a regular arrangement. It exhibits good optical properties, with a band gap of about 2.26 electron volts (eV), making it suitable for optoelectronics and optical device preparation. As a semiconductor, Gallium Phosphide has electrically tunable conductivity, making it suitable for electronics and optoelectronics applications. It is not a magnetic material, but under specific doping conditions, magnetic impurities can be introduced, which can be used in the study of magnetic materials. Gallium Phosphide is a semiconductor at room temperature, and its conductivity is between that of a conductor and an insulator, depending on the type and concentration of impurities. It exhibits good thermal stability over various temperatures and is suitable for many applications in high-temperature environments.
|Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″
Our Gallium Phosphide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.