(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0954 Barium Ruthenium Oxide Sputtering Target, BaRuO3

Chemical Formula BaRuO3
Catalog No. ST0954
CAS Number 12009-17-5
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

The Barium Ruthenium Oxide Sputtering Target provided by Stanford Advanced Materials (SAM) ensures optimal performance, making it an ideal choice for professionals prioritizing precision and quality in advanced electronic device manufacturing. Elevate your projects with this specialized sputtering target, designed for reliability and excellence in thin film deposition.


Barium Ruthenium Oxide Sputtering Target Description

Barium Ruthenium Oxide is an oxide with metallic conductivity that displays good electronic conductivity, making it an ideal material choice for thin film deposition in semiconductors and electronic devices. It possesses some catalytic activity, which makes Barium Ruthenium oxide potentially promising for catalytic applications. Barium Ruthenium oxide may have high thermal stability, which allows it to maintain certain physical and chemical properties at high temperatures. Through precision preparation, Barium Ruthenium Oxide Sputtering Targets maintain high purity, ensuring that they provide excellent performance and stability in research and industrial applications.

Related Product: Barium Titanate Sputtering Target, Barium Zirconate Sputtering Target

Barium Ruthenium Oxide Sputtering Target Specifications

Compound Formula BaRuO3
Molecular Weight 286.39
Appearance Black Target
Melting Point
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Barium Ruthenium Oxide Sputtering Target Handling Notes

  1. Indium bonding is recommended for the Barium Ruthenium Oxide Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Barium Ruthenium Oxide Sputtering Target Application

  1. Semiconductor Preparation: As a thin film deposition material, Barium Ruthenium oxide is widely used in the semiconductor industry to prepare conductive layers for electronic devices and to improve device performance.
  2. Optoelectronics: The sputtering target is widely used in the field of optoelectronics for the production of photodiodes, photodetectors, and other optical components.
  3. Magnetic Materials Research: The magnetic properties of Barium Ruthenium oxide make it ideal for magnetic materials research, with possible applications in magnetic memory devices and magnetic sensors.
  4. Catalytic applications: Barium Ruthenium oxide with its catalytic activity can be used to catalyze reactions and may play a key role in chemical synthesis and energy.
  5. High-temperature stable materials: Due to its relatively high thermal stability, Barium Ruthenium oxide can be used in the preparation of materials for high-temperature environments, such as high-temperature electronic devices.

Barium Ruthenium Oxide Sputtering Target Packaging

Our Barium Ruthenium Oxide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Barium Ruthenium Oxide Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.