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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0948 Lead Arsenide Sputtering Target, PbAs

Chemical Formula PbAs
Catalog No.
CAS Number
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

Stanford Advanced Materials (SAM) offers Lead Arsenide Sputtering Targets of various forms, high purities, large sizes, and highly competitive prices. Stanford Advanced Materials (SAM)‘s mature Lead Arsenide Sputtering Targets ensure exceptional quality and are competitively priced.


Lead Arsenide Sputtering Target Description

Lead Arsenide Sputtering Targets find application in sputter deposition processes, facilitating the preparation of thin films for use in electronics, optoelectronics, and various semiconductor applications. These sputtering targets consist of semiconducting materials, showcasing conductivity levels between that of a conductor and an insulator. This unique property positions the Lead Arsenide Sputtering Target as a promising material for the preparation of semiconductor devices.

With a direct energy gap, Lead Arsenide requires relatively small amounts of energy for electron and hole transitions. This characteristic makes Lead Arsenide potentially advantageous in the creation of optoelectronic devices, where efficient energy transitions are crucial. Additionally, Lead Arsenide Sputtering Targets typically exhibit relatively good thermal stability, allowing for application in high-temperature scenarios within specified limits.

Related Product: Lead Oxide Sputtering Target, Lead Zirconate Sputtering Target

Lead Arsenide Sputtering Target Specifications

Compound Formula PbAs
Molecular Weight 282.12
Appearance Grey Target
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Lead Arsenide Sputtering Target Handling Notes

  1. Indium bonding is recommended for Lead Arsenide Sputtering Targets, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Lead Arsenide Sputtering Target Application

  1. Semiconductor device preparation: Lead Arsenide Sputtering Targets can be used for sputtering deposition for the preparation of semiconductor devices such as thin film transistors (TFTs) and other integrated circuit components.
  2. Optoelectronics devices: Since Lead Arsenide (PbAs) is a semiconductor material, Lead Arsenide Sputtering Targets can be used to prepare devices for applications in optoelectronics, such as photodetectors and lasers. In addition, the application of Lead Arsenide Sputtering Targets involves the preparation of semiconductor nanostructures such as nanowires and nanodots, which are used in the research and development of new nanoelectronics devices.
  3. Topological insulator research: In some cases, Lead Arsenide (PbAs) may exhibit topological insulator properties, so Lead Arsenide Sputtering Targets may be used for research in topological physics.

Lead Arsenide Sputtering Target Packaging

Our Lead Arsenide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.