| Catalog No. | CY2306 |
|---|---|
| Size | Dia30 x 0.5mm, 20x20x0.5mm, 10x10x0.5mm, 5x5x0.5mm |
| Material | LiGaO2 |
| Orientation | <100>, <001> ±0.5º |
Stanford Advanced Materials (SAM) offers high purity lithium gallate crystal substrates. To meet your needs, we have different properties of substrates for different applications.
LiGaO2 Lithium Gallate Crystal Substrate is a wide-band-gap semiconductor with an optical gap greater than 5.3 eV. When alloyed with ZnO, this material offers broad functionality for optical devices that generate, detect, and process light across much of the ultraviolet spectral region.
|
Substrate |
LiGaO2 substrate |
|
Growth method |
Czochralski method |
|
Crystal Structure |
Orthogonal system |
|
Lattice constant |
a=5.406 Å b=5.012 Å c=6.379 Å |
|
Melting point: |
1600 °C |
|
Density: |
4.18g/cm3 |
|
Mohs hardness |
7.5 |
|
Orientation |
<100>, <001> |
|
Standard Size |
Dia30 x 0.5mm, 20x20x0.5mm, 10x10x0.5mm, 5x5x0.5mm |
|
Polishing |
Fine ground, One side polished or Two side polished |
Lithium gallate crystal substrates are the best materials for matching with GaN epitaxial films. GaN films are the basis for the current production of blue, violet, ultraviolet light-emitting diodes, and solid-state white light sources.
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