(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0971 Germanium Selenide Sputtering Target, GeSe

Chemical Formula GeSe
Catalog No. ST0971
CAS Number 12065-10-0
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

Stanford Advanced Materials (SAM) takes pride in offering Germanium Selenide Sputtering Targets characterized by unparalleled purity and competitive pricing. Leveraging our extensive expertise in materials science, we ensure exceptional performance and reliability through the meticulous craftsmanship of our targets.


Germanium Selenide Sputtering Target Description

Germanium Selenide Sputtering Targets are renowned for their outstanding thermal stability, ensuring consistent and reliable performance throughout the thin film deposition process.

The unique composition of Germanium Selenide contributes to its remarkable electrical conductivity, positioning it as an excellent material for applications requiring efficient charge transport. Additionally, the targets boast a meticulously engineered microstructure, offering uniformity that is crucial for precision in sputtering performance. Stringent manufacturing processes ensure minimal impurities, enhancing the overall quality of the deposited thin films.

Versatile and adaptable, Germanium Selenide Sputtering Targets are designed to meet the evolving needs of advanced technologies. Their compatibility with various sputtering systems allows for seamless integration into research and manufacturing processes.

In essence, these sputtering targets exemplify high thermal stability, outstanding electrical conductivity, and meticulous microstructural engineering, making them a cornerstone material for advanced thin film deposition technologies.

Related Product: Germanium Sputtering Target, Germanium Sulfide Sputtering Target

Germanium Selenide Sputtering Target Specifications

Compound Formula GeSe
Molecular Weight 151.60
Appearance Black Target
Melting Point 667 °C
Density 5.6 g/cm3
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Germanium Selenide Sputtering Target Handling Notes

  1. Indium bonding is recommended for the Germanium Selenide Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Germanium Selenide Sputtering Target Application

  1. Semiconductor Manufacturing: Germanium Selenide Sputtering Targets play a key role in semiconductor manufacturing. Due to their excellent electrical properties, these targets are used as important materials for thin film deposition in the preparation of semiconductor devices.
  2. Optoelectronic Devices: Due to their special physical and chemical properties, Germanium Selenide Sputtering Targets are important in the manufacture of optoelectronic devices. This includes thin film deposition for photovoltaic devices and other optoelectronic components.
  3. Sensor Technology: Germanium Selenide Sputtering Targets are also widely used in the manufacture of sensors. Their special properties make them ideal for the preparation of high-performance sensors.
  4. Scientific Research: Due to their high degree of fineness and controllability during thin film deposition, Germanium Selenide Sputtering Targets are often used in scientific research and laboratory environments to support materials research and the development of new technologies.

Germanium Selenide Sputtering Target Packaging

Our Germanium Selenide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Germanium Selenide Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapour deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapour deposition (CVD), and physical vapour deposition (PVD) display and optical applications.